Samsung has started mass producing 128GB flash memory chips that feature the highest density in the industry, and are made with a 10nm process. Such high-capacity flash memory chips already exist in the marketplace, and the South Korean company is looking to not only bring smaller flash memory chips to mobile devices, but also replace traditional hard drives. These new flash memory chips are rated for 400Mbps throughput and according to Samsung, will be utilized in its high-capacity microSD cards, as well as solid-state drives with over 500 GB of storage. For consumers, this introduction of new flash memory chips means lower prices for current high-capacity, flash-based storage that is still out of reach for many.
Samsung Mass Producing High-Performance 128-Gigabit 3-Bit Multi-Level-Cell NAND Flash Memory
SEOUL, South Korea–(BUSINESS WIRE)–Samsung Electronics Co., Ltd., the world leader in advanced memory technology, announced today that it has begun mass producing a 128-gigabit (Gb), 3-bit multi-level-cell (MLC) NAND memory chip using 10 nanometer (nm)-class* process technology this month. The highly advanced chip will enable high-density memory solutions such as embedded NAND storage and solid state drives (SSDs).
“The new chip is a critical product in the evolution of NAND flash, one whose timely production will enable us to increase our competitiveness in the high density memory storage market.”
Utilizing 128Gb NAND flash memory, Samsung will expand its supply of 128-gigabyte (GB) memory cards, which can store as many as sixteen 8GB full HD video files. Samsung now will also increase its production volume of SSDs with densities over 500GBs for wider adoption of SSDs in computer systems, while leading the transition of main storage drives in the notebook market from hard disk drives (HDDs) to SSDs.
Demand for high-performance 3-bit MLC NAND flash and 128Gb high storage capacities has been rapidly increasing, driving the adoption of SSDs with more than 250GB data storage, led by the Samsung SSD 840 Series.
Samsung started production of 10nm-class 64Gb MLC NAND flash memory in November last year, and in less than five months, has added the new 128Gb NAND flash to its wide range of high-density memory storage offerings. The new 128Gb chip also extends Samsung’s 3-bit NAND memory line-up along with the 20nm-class* 64Gb 3-bit NAND flash chip that Samsung introduced in 2010. Further, the new 128Gb 3-bit MLC NAND chip offers more than twice the productivity of a 20nm-class 64Gb MLC NAND chip.
Samsung plans to keep introducing leading-edge SSDs and embedded memory storage solutions with high-quality features, in accelerating the growth of the premium memory market.
SEOUL, South Korea–(BUSINESS WIRE)–Samsung Electronics Co., Ltd., the world leader in advanced memory technology, announced today that it has begun mass producing a 128-gigabit (Gb), 3-bit multi-level-cell (MLC) NAND memory chip using 10 nanometer (nm)-class* process technology this month. The highly advanced chip will enable high-density memory solutions such as embedded NAND storage and solid state drives (SSDs).
“The new chip is a critical product in the evolution of NAND flash, one whose timely production will enable us to increase our competitiveness in the high density memory storage market.”
Utilizing 128Gb NAND flash memory, Samsung will expand its supply of 128-gigabyte (GB) memory cards, which can store as many as sixteen 8GB full HD video files. Samsung now will also increase its production volume of SSDs with densities over 500GBs for wider adoption of SSDs in computer systems, while leading the transition of main storage drives in the notebook market from hard disk drives (HDDs) to SSDs.
Demand for high-performance 3-bit MLC NAND flash and 128Gb high storage capacities has been rapidly increasing, driving the adoption of SSDs with more than 250GB data storage, led by the Samsung SSD 840 Series.
Samsung started production of 10nm-class 64Gb MLC NAND flash memory in November last year, and in less than five months, has added the new 128Gb NAND flash to its wide range of high-density memory storage offerings. The new 128Gb chip also extends Samsung’s 3-bit NAND memory line-up along with the 20nm-class* 64Gb 3-bit NAND flash chip that Samsung introduced in 2010. Further, the new 128Gb 3-bit MLC NAND chip offers more than twice the productivity of a 20nm-class 64Gb MLC NAND chip.
Samsung plans to keep introducing leading-edge SSDs and embedded memory storage solutions with high-quality features, in accelerating the growth of the premium memory market.
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