It’s no surprise that as the processors for our Android devices get faster, other areas such as the device’s memory get faster as well. That’s why Sandisk has been working behind the scenes on its flash memory technology and recently announced it has begun customer sampling of flash memory products based on its 1Ynm process technology. For those of you not familiar with this technology, Sandisk is able to develop smaller-scale memory cell sizes, allowing for multi-level data storage management schemes which help bring multi-level cell (MLC) NAND flash memory chips— chips that don’t even come close to compromising performance or reliability when used on our devices out there. So the hope is that this brand-new technology will ultimately bring smaller and less circuitry, while simultaneously bringing high capacity memory units at a lower cost. And hey— who wouldn’t want a more efficient and faster microSD card or other flash memory unit?
No word yet on when this technology will hit the general public yet, but hopefully we’ll see it on our devices sooner than later. Hit the break for the full presser from Sandisk.
SANDISK ADVANCES ITS INDUSTRY-LEADING MANUFACTURING TECHNOLOGY
MILPITAS, Calif., May 20, 2013— SanDisk Corporation (NASDAQ: SNDK), a global leader in flash memory storage solutions, today announced it has begun customer sampling of flash memory products based on its industry-leading 1Ynm process technology, which represents its second generation 19 nanometer (nm) manufacturing technology.
SanDisk’s achievement of this breakthrough in semiconductor manufacturing takes its memory cell size from 19nm-by-26nm to 19nm-by-19.5nm, delivering a 25 percent reduction of the memory cell area and allowing SanDisk to continue leading the industry in building smaller, more powerful flash memory products.
SanDisk’s second-generation 19nm memory die uses the most sophisticated flash memory technology node to-date, including advanced process innovations and cell-design solutions. SanDisk’s All-Bit-Line (ABL) architecture with proprietary programming algorithms and multi-level data storage management schemes help yield multi-level cell (MLC) NAND flash memory chips that do not sacrifice performance or reliability. In addition, SanDisk’s three bits per cell X3 technology, implemented in the second-generation 19nm node will deliver the lowest-cost flash solutions to address multiple growing end-markets for flash memory.
SanDisk’s latest breakthrough in shrinking the circuitry used in flash memory chips allows higher capacity products and lower cost manufacturing techniques to be employed when creating SanDisk’s flash memory solutions. Consumers and businesses worldwide will benefit from this new advanced manufacturing technology by having access to higher capacity and smaller-sized flash memory chips from SanDisk for mobile phones, tablets, Solid State Drives (SSDs) for client and enterprise markets, and consumer products.
About SanDisk
SanDisk Corporation (NASDAQ: SNDK) is a global leader in flash memory storage solutions, from research and development, product design and manufacturing to branding and distribution for OEM and retail channels. Since 1988, SanDisk’s innovations in flash memory and storage system technologies have provided customers with new and transformational digital experiences. SanDisk’s diverse product portfolio includes flash memory cards and embedded solutions used in smart phones, tablets, digital cameras, camcorders, digital media players and other consumer electronic devices, as well as USB flash drives and solid-state drives (SSD) for the computing market. SanDisk’s products are used by consumers and enterprise customers around the world.
SanDisk is a Silicon Valley-based S&P 500 and Fortune 500 company, with more than half its sales outside the United States. For more information, visit www.sandisk.com.
© 2013 SanDisk Corporation. All rights reserved. SanDisk and the SanDisk logo are trademarks of SanDisk Corporation, registered in the United States and other countries. Other brand names mentioned herein are for identification purposes only and may be the trademarks of their respective holder(s).
This press release contains certain forward-looking statements, including expectations for technologies, performance, costs, product capabilities, markets and customers that are based on our current expectations and involve numerous risks and uncertainties that may cause these forward-looking statements to be inaccurate. Risks that may cause these forward-looking statements to be inaccurate include among others: the market demand for our products may grow more slowly than our expectations or the other risks detailed from time-to-time in our Securities and Exchange Commission filings and reports, including, but not limited to, our most recent quarterly report on Form 10-Q and our annual report on Form 10-K. We do not intend to update the information contained in this press release.
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